Nonlinear Electrical Behaviour of the TiO ₂ ·Sb ₂ O ₃ System

Abstract

The Sb2O3-doped TiO2 varistors were obtained by conventional ceramic processing. The 0.75 mol% Sb2O3·99.25 mol% TiO2 varistor has a nonlinear coefficient α = 7 and a minimum breakdown electrical field of 6 V/mm. The nonlinear electrical behaviour of TiO2·Sb2O3 ceramics was explained by the introduction of defects in the crystal lattice that are responsible for the formation of Schottky potential barriers at grain boundaries.