Carrier-density-dependent electron effective mass in Zn1−xMnxSe for ⩽x⩽0.13

Abstract

We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1−xMnxSe epilayers (0⩽x⩽0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical electron effective mass (m*) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1−xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133m0 to 0.152m0, while in Zn0.87Mn0.13Se:Cl samples, we found a variation from 0.095m0 to 0.115m0 within ±9% experimental accuracy. From theoretical calculations, we estimate that the band-edge electron masses in ZnSe:Cl and Zn0.87Mn0.13Se:Cl should be about 0.132m0 and 0.093m0, respectively.