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CPW phase shifter using barium strontium titanate thin film on silicon substrate

10

Citations

10

References

2004

Year

Abstract

In this paper the design and development of a coplanar waveguide phase shifter on high resistivity silicon substrate is presented. This design makes use of BaSrTiO/sub 3/ thin film (50% dielectric tunability) grown on SiO/sub 2//poly-Si by RF sputtering method. A new process flow has been developed to enable full compatibility for direct integration with current CMOS technology. Other important features of this design are the bilateral interdigital structure, and the inclusion of a polysilicon layer for improved performance.

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