High repetition frequency power nanosecond pulse generation

Abstract

A new type of semiconductor opening switch-drift step recovery diodes (DSRD)-gave rise to a new generation of all solid state nanosecond pulsers with peak power up to a hundred megawatts. The main advantages of these switches are: long life, very good time stability (low jitter), small sizes, and a respectively simple technology of manufacturing. They have a very important feature as well: the total length of both plasma pumping and plasma removing cycles are several hundreds (100-300) of nanoseconds even for high power pulse generation. After the end of the plasma removing cycle, DSRD is in an initial opening state and is ready for the next cycle. Generally speaking, it is possible to generate power pulses at megahertz pulse repetition rates. The presented work is devoted to this mode description.