Bias Polarity‐Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

Abstract

Bias polarity-induced transformation of point contact resistive switching memory from a single transparent conductive metal oxide layer is demonstrated on three kinds of transparent conductive oxide (TCO) layers, including indium tin oxide, fluorine-doped tin oxide, and aluminum-doped zinc oxide, as conducting electrode and memristive material by the controllably electrical field simultaneously. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.