Ferroelectric properties of alkoxy-derived CaBi4Ti4O15 thin films on Pt-passivated Si

Abstract

CaBi 4 Ti 4 O 15 (CBTi144) thin films were prepared by spin coating a precursor solution of metal alkoxides. As-deposited thin films began crystallization below 550 °C and reached full crystallinity of a single phase of layered perovskite at 650 °C via rapid thermal annealing in oxygen. The 650 °C annealed CBTi144 thin film showed random orientation on Pt-passivated Si substrate and exhibited P-E hysteresis loops. The remanent polarization (Pr) and coercive electric field (Ec) were 9.4 μC/cm2 and 106 kV/cm, respectively, at 11 V. The dielectric constant and loss factor were 300 and 0.033, respectively, at 100 kHz.