Publication | Closed Access
High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications
22
Citations
2
References
2005
Year
EngineeringHigh-temperature McpmPower Electronic SystemsPower ElectronicsAdvanced Packaging (Semiconductors)Thermal ModelingElectronic PackagingHigh-temperature Silicon CarbidePower Electronic DevicesPower SwitchesElectrical EngineeringPower Semiconductor DeviceHeat TransferMicroelectronicsCompact Power PackageMultichip Power ModulePower DeviceThermal ManagementPrototype TestingThermal EngineeringCarbide
Arkansas Power Electronics International, Inc, (APEI, Inc.) and University of Arkansas researchers have developed a novel, highly miniaturized motor drive capable of operation in excess of 250 /spl deg/C. The high-temperature multichip power module (MCPM) integrates silicon carbide (SiC) JFET power transistors with high-temperature MOS silicon-on-insulator (SOI) control electronics into a single, highly miniaturized and compact power package. This paper will outline the design philosophy behind the high-temperature MCPM, illustrate thermal modeling results of the package, and present the results of prototype testing (demonstrating functionality).
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