Integration of Pb(Zr0.52Ti0.48)O3 epilayers with Si by domain epitaxy

Abstract

High-quality lead zirconate titanate films (PZT) have been grown on yttrium barium copper oxide (YBCO) bottom electrode by domain epitaxy where integral multiples of lattice constants match across the interface. The YBCO films were epitaxially fabricated on Si (100) by introducing epilayer geometry of strontium titanate/magnesium oxide/titanium nitride. Pulsed-laser ablation was used to evaporate these five stoichiometric targets in a high vacuum chamber. X-ray diffraction and high-resolution transmission electron microscopy techniques were employed to gain understanding of the structure, crystallinity, and interfaces in these epilayers. The electrical characterization of the PZT films with evaporated silver contacts resulted in superior values of spontaneous polarization, remnant polarization, and coercive fields. This heterostructure opens a way for integration of epitaxial single-crystal PZT-based capacitors with silicon-based devices.