Menstrual cycle patterns and breast cancer risk factors.

Abstract

The impedance characteristics for redox reactions involving minority carrier recombination at semiconductor electrodes differ markedly from those involving majority carriers. In this work, holes were generated in the valence band ofn-GaAs by illumination or injection from solution. A recombination resistance is used to characterize the process bywhich these holes recombine with electrons from the conduction band. This resistance is shown to be independent ofthe method of hole generation, the pH of the solution, and the nature of the injecting species, but dependent on the generation rate.