Heteroepitaxial Growth of β ‐ SiC on Si (111) by CVD Using a CH 3Cl ‐ SiH4 ‐ H 2 Gas System

Abstract

epitaxial films were grown on Si (111) substrate by a two‐step chemical vapor deposition (CVD) method to form a buffer layer (carbonization process) and to grow film using and gas systems. epitaxial films with a smooth surface were obtained, and the crystallinity and morphology were comparable to those of films grown on Si (100) using a gas system. The buffer layers of mosaic crystals of 90 nm thickness were formed on Si (111) substrate with the generation of voids in the carbonization process. This result directly indicates the Si out‐diffusion mechanism for the formation of the buffer layer in the carbonization process.