Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium

Abstract

We report the observation of visible photoluminescence and cathodoluminescence of Eu3+ ions implanted in GaN and Al0.14Ga0.86N/GaN superlattice. The sharp characteristic emission lines corresponding to Eu3+ intra-4f6-shell transitions are resolved and observed over the temperature range of 7–330 K. The luminescence shows dominant transitions D50→7F1,2,3 and weaker D50→7F4,5,6 and D51→7F1. The luminescence emission is very weakly temperature dependent. The intensity of Eu3+ emission from Al0.14Ga0.86N/GaN superlattice annealed in N2 is ∼58% stronger than from Eu3+ in the GaN layer. The Al0.14Ga0.86N/GaN superlattice and GaN epilayers may be suitable as a material for visible optoelectronic devices.