Publication | Closed Access
Spin polarization in Zn<sub>0.95</sub>Co<sub>0.05</sub>O:(Al,Cu) thin films
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Citations
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References
2006
Year
EngineeringPositive MagnetoresistanceSpin DynamicSpin PhenomenonMagnetoresistanceMagnetismMagnetic Thin FilmsPulsed Laser DepositionMaterials SciencePhysicsOxide ElectronicsMagnetic MaterialSpintronicsFerromagnetismNatural SciencesCondensed Matter PhysicsApplied PhysicsThin FilmsSpin PolarizationNegative MagnetoresistanceMagnetic Property
ZnCoO : Al, ZnCoO : (Al,Cu), and reference samples without Co have been grown by pulsed laser deposition to investigate the influence of Co-dopants and Cu-codopants on the magneto transport properties of ZnO. Positive magnetoresistance and anomalous Hall effect have been observed for ZnCoO : (Al,Cu). Versatile theoretical approaches for modelling positive magnetoresistance in ZnO-based diluted magnetic semiconductors are still to be developed. Negative magnetoresistance due to the scattering of spin-polarized charge carriers at isolated magnetic impurities has been observed in ZnO : (Al,Cu) without Co-dopants and successfully modelled. Cu-codopants enhance the positive and negative magnetoresistance in ZnCoO : Al and ZnO : Al, respectively, by one order of magnitude.
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