NbN / TiN x / NbN / TiN x / NbN double-barrier junction arrays for programmable voltage standards

Abstract

A series array of NbN/TiNx/NbN/TiNx/NbN double-barrier junctions was fabricated on Si wafers, and their current–voltage (I–V) characteristics were measured with and without microwave power in order to investigate their performance for programmable voltage standards. By adjusting the thickness of the TiNx barrier, nearly identical critical currents were obtained for 128 lower and 128 upper junctions in an array. When applying 8 GHz microwave power to an array, a large constant-voltage step (∼3 mA) appeared on the I–V curve. The zero-voltage critical current and the height of the first (n=1) constant-voltage step showed microwave-power dependences coincident with theoretical prediction.