InAsP–Cs2O, A HIGH-EFFICIENCY INFRARED-PHOTOCATHODE

Abstract

The response of an InAs0.15P0.85–Cs2O photoemitter in the spectral range from 0.4 to 1.1μ is experimentally investigated. The 0.8% quantum efficiency obtained at 1.06μ represents more than an order of magnitude improvement in yield over existing S-1 photosurfaces. The physical principle upon which this photoemitter is based is discussed in terms of a simple energy-level diagram.