Conduction, reverse conduction and switching characteristics of GaN E-HEMT

Abstract

In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curvetracer. The reverse conduction was found to be similar to the forward conduction with a voltage drop of V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> –V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs(OFF)</inf> . To decrease the parasitic impedance some considerations has been taken. These considerations are described and a model of the double pulse test is formulated.