Publication | Closed Access
<i>p</i>-type conductivity in CuCr1−xMgxO2 films and powders
422
Citations
11
References
2001
Year
Materials EngineeringMaterials ScienceSemiconductorsOptical MaterialsEngineeringBulk Undoped Cucro2Direct Band GapMaterial AnalysisOxide ElectronicsApplied PhysicsCucr1−xmgxo2 FilmsSemiconductor MaterialThin Film Process TechnologyThin FilmsFunctional MaterialsCucr 1−X
CuCr 1−x Mg x O 2 , a wide band gap semiconductor with the delafossite structure, has been synthesized in bulk and thin-film form. Bulk undoped CuCrO2 is almost black and has moderate conductivity with p-type carriers. Upon doping with 5% Mg, the conductivity increases by a factor of 1000. In films, the best p-type conductivity is 220 S cm−1 in CuCr0.95Mg0.05O2, a factor of 7 higher than previously reported for Cu-based p-type delafossites. Undoped films have a conductivity of order 1 S cm−1. Films are usually polycrystalline on amorphous substrates, but undoped films can be c-axis oriented if deposited at or above 650 °C. Optical and ultraviolet transmission data indicate a direct band gap of 3.1 eV.
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