Near-infrared photodetectors utilizing MoS2-based heterojunctions

Abstract

Near-infrared photodetectors are developed using graphene/MoS2 and WSe2/MoS2 vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W−1 for the graphene/MoS2 and WSe2/MoS2 heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS2 phototransistor.