120<tex>$^circhboxC$</tex>10-Gb/s Uncooled Direct Modulated 1.3-<tex>$muhboxm$</tex>AlGaInAs MQW DFB Laser Diodes

Abstract

A 1.3-μm AlGaInAs multiquantum well ridge waveguide distributed feedback laser diode was developed. By forming n-InGaAsP grating in the n-InP cladding layer close to the active region, accumulation of the holes in the grating layer was reduced and over 5 mW of output power was obtained at 120/spl deg/C. Clear eye opening was confirmed with no mask hits for OC-192 under 10-Gb/s direct modulation at the temperature up to 120/spl deg/C.