Thin films of CdIn/sub 2/O/sub 4/ as transparent conducting oxides

Abstract

Cadmium indate, CdIn/sub 2/O/sub 4/, thin films have been deposited on glass substrates by reactive co-sputtering from Cd and In metallic targets in argon ambient with a partial pressure of oxygen of 0.25. The effect of the cadmium-indium ratio on the electro-optical properties of the films was investigated. It was found that films with a Cd/In ratio of 0.37 and subsequent annealing at 600/spl deg/C yielded the best electrical and optical characteristics. Films with such ratios exhibited average optical transmission in the 400-900 nm range of over 90%, with resistivities below 3/spl times/10/sup -4/ /spl Omega/-cm. The lowest resistivity obtained was 2.95/spl times/10/sup -4/ /spl Omega/-cm, corresponding to a mobility of 30.93 cm/sup 2//V/s and carrier concentration of 5.47 /spl times/ 10/sup 20/ cm/sup -3/.