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A highly efficient octave bandwidth high power amplifier in GaN technology
19
Citations
8
References
2011
Year
Wide-bandgap SemiconductorElectrical EngineeringGan TechnologyEngineeringRf SemiconductorHigh Power AmplifierApplied PhysicsHigh PowerGan Power DeviceRadar ApplicationPower ElectronicsCommercial Gan DeviceCategoryiii-v SemiconductorMicrowave Engineering
This contribution describes the design and validation of a L-band hybrid high power amplifier for radar application with high power added efficiency (PAE). The HPA is designed using a commercial GaN device by Cree, in a single ended configuration, starting from a simulated load-pull approach. Pulsed measurements of the designed PA demonstrate 90 W of saturated output power across the desired bandwidth with an average PAE of 50%.
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