2015 · 11 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesImpedance MatchingPower AmplifiersWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBandwidthBroadband Impedance MatchingBroadband MatchingClass E AmplifiersClass E Power AmplifiersGallium Nitride Power AmplifiersHigh-efficiency Power AmplifiersPower Amplifier Design
It has been shown that broadband operation of class-E amplifiers is possible using the reactance compensation technique. In this paper, broadband lumped-element network transforms are used in order to design the loading network that provides broadband reactance compensation and broadband impedance matching simultaneously while keeping high efficiency and maintaining output power within wide bandwidth. The final output network topology is canonic and alternates series and shunt components which are more suitable for practical implementation and tuning. As proof of concept, a GaN FET prototype is presented achieving 80% efficiency over 43% fractional bandwidth at around 255-MHz and 60% efficiency over an octave bandwidth at around 245-MHz.
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Narendra Kumar, Chacko Prakash, Andrei Grebennikov et al. · IEEE Transactions on Microwave Theory and Techniques · 2008 · 108 citations