Molecular Beam Epitaxy‐Grown SnSe in the Rock‐Salt Structure: An Artificial Topological Crystalline Insulator Material

Abstract

A new topological crystalline insulator material, SnSe in the rock-salt structure, is obtained using molecular beam epitaxy. The thermodynamically unstable rock-salt SnSe phase is stabilized in epitaxial films up to 20 nm by a Bi2Se3 substrate. Dirac surface states are observed at both the and the points using angle-resolved photoemission spectroscopy; this confirms the topological crystalline insulator phase of the films. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.