Epitaxial yttria-stabilized zirconia on (1102)sapphire for YBa2Cu3O7−δ thin films

Abstract

Epitaxial yttria-stabilized zirconia (YSZ) films were deposited on (11̄02) sapphire by pulsed laser deposition. The films are formed in a cubic phase with the a axis normal to the substrate surface. Ion beam (2.8 MeV He++) channeling measurements show that the YSZ films are highly crystalline with a channeling minimum yield of 8%. The epitaxial relationship between the film and substrate is further confirmed by a cross-section transmission electron microscopy study. Epitaxial YBa2Cu3O7−δ thin films deposited on YSZ/sapphire have Tc and Jc of up to 89 K and 1×106 A/cm2 at 77 K, respectively.