Journal of Applied Physics · 2005 · 43 citations · 27 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationHigh-frequency Semiconductor DevicesMagnetic CharacterizationMagnetic SensorsNoise In Electronic DevicesNoise In Semiconductor DevicesDetection Limit AnalysisDetection Limit AssessmentHall Effect MeasurementsHall Effect SensingMagnetic Field SensorsMagnetic NoiseMagnetic Sensor MaterialsNoise Limits In Semiconductor Devices
Micro-Hall devices based on modulation-doped Al0.12In0.88Sb∕InSb heterostructures are fabricated and studied in terms of sensitivity and noise. Extremely high supply-current-related magnetic sensitivities of 1800VA−1T−1 at 77K and 1220VA−1T−1 at 300K are reported and observed to be independent of the bias current. The detection limit of the devices studied at low and room temperature are at nanotesla values throughout the broad frequency range from 20Hzto20kHz. The low detection limit of 28nT at 300K and 18nT at 77K were found at high frequencies where the Johnson noise is dominant. A measured detection limit per unit device width of 630pTmmHz−1∕2 is reported indicating the potential for picotesla detectivity.
27
F.N. Hooge · IEEE Transactions on Electron Devices · 1994 · 993 citations · Full text
Scanning Hall probe microscopy
A. M. Chang, Hans D. Hallen, L. R. Harriott et al. · Applied Physics Letters · 1992 · 375 citations