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Powerful semiconductor 80 kV nanosecond pulser

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2002

Year

Abstract

The 80 kV all solid-state nanosecond pulser with rise time 0.9 ns, repetition rates up to 1 kHz and pulse duration of 2 ns is developed. As the basic switches in the generator drift step recovery diodes (DSRD) and fast ionization dynistors (FID) are used. That allows creation of the outlet power block generating voltage pulse with amplitude 80 kV, with dimensions of 150/spl times/150/spl times/100 mm. The efficiency of the generator is about 35%. As a cooling subsystem an air-oil system pumping of oil through the power block is used. Special high-voltage connectors capable of transmitting voltage pulses with amplitude up to 100 kV and edges less than 0.5 ns, are developed. An attenuator was also developed that allowed output voltage of the generator to be measured.