Room-temperature pulsed operationof 1.3 µm GaInNAs/GaAs laser diode

Abstract

A lattice-matched GaInNAs/GaAs double-heterostructure laser diode has been developed by metal organic chemical vapour deposition using dimethylhydrazine as a nitrogen source. Lasing at 1.3 µm at room-temperature under pulsed operation is demonstrated.