Room-temperature pulsed operationof 1.3 µm GaInNAs/GaAs laser diode

Concepts

EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionLaser DiodesOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersDouble HeterostructuresHeterostructure LasersHeterostructure OptoelectronicsMetal-organic Chemical Vapor DepositionOptical GainOptical Gain MaterialsPulsed OperationSemiconductor Laser Diodes

Abstract

A lattice-matched GaInNAs/GaAs double-heterostructure laser diode has been developed by metal organic chemical vapour deposition using dimethylhydrazine as a nitrogen source. Lasing at 1.3 µm at room-temperature under pulsed operation is demonstrated.

References

GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

Masahiko Kondow, K. Uomi, Atsuko Niwa et al. · Japanese Journal of Applied Physics · 1996 · 1.4K citations

Engineering, Materials Engineering, Materials Science +14

Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

Shunichi Sato, Y. Osawa, T. Saitoh · Japanese Journal of Applied Physics · 1997 · 111 citations

Engineering, Electrical Engineering, Materials Science +16

Room-temperature continuous-wave operation of GaInNAs/GaAslaser diode

Masahiko Kondow, S. Natatsuka, T. Kitatani et al. · Electronics Letters · 1996 · 67 citations

Engineering, Electrical Engineering, Materials Science +17