Publication | Open Access
Current-induced effect on the resistivity of epitaxial thin films of La0.7Ca0.3MnO3 and La0.85Ba0.15MnO3
118
Citations
12
References
2003
Year
Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringPeak ResistanceCurrent-induced EffectSpecific ResistanceCurrent ResistanceOxide ElectronicsApplied PhysicsElectric-current-dependent ResistanceSemiconductor MaterialThin Film Process TechnologyEpitaxial Thin FilmsThin FilmsMolecular Beam EpitaxyEpitaxial GrowthElectrical Property
Electric-current-dependent resistance has been studied in epitaxial thin films of La0.7Ca0.3MnO3 and La0.85Ba0.15MnO3. Attention was focused at the influence of the applied dc current on the resistance of these epitaxial thin films in the absence of a magnetic field. A significant change in the ratio of the peak resistance at different currents or current resistance was found to be ∼23%–26% with a current density up to 8×104 Acm−2. For both La0.7Ca0.3MnO3 and La0.85Ba0.15MnO3 compounds, the dependence of the measured resistance on the current revealed a good linear relationship. Although the nature behind such an effect has not been well understood yet, the feature that the resistance in doped manganese oxides could be easily controlled by the electric current should be of interest for various applications such as field effect devices.
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