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Electrical Properties of Al2 O 3 ‐ Ta2 O 5 Composite Dielectric Thin Films Prepared by RF Reactive Sputtering
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1987
Year
Thin Film PhysicsDielectricsEngineeringAl2 O 3Thin Film Process TechnologyElectrical PropertiesThin Film ProcessingMaterials ScienceRf Reactive SputteringElectrical EngineeringDielectric ConstantOxide ElectronicsThin Film MaterialsElectrical PropertyComposite Thin FilmsApplied PhysicsThin Film DevicesThin FilmsChemical Vapor DepositionElectrical Insulation
Composite thin films of and were deposited by RF magnetron cosputtering in argon‐oxygen mixed gas. As the molar concentration of the films decreased, the dielectric constant decreased from 25 to 7, and the leakage current also decreased. Controlling the composition of the thin films ( concentration: 40–80%), dielectric properties were found to be more suitable for the thin film devices, i.e., higher dielectric constant , higher breakdown voltage, and lower leakage currents (, at 20V).