Photovoltaic p-i-n Structure of Sb[sub 2]S[sub 3] and CuSbS[sub 2] Absorber Films Obtained via Chemical Bath Deposition

Abstract

Chemically deposited, near-intrinsic thin films and thin films obtained through heating thin films have been integrated into a p-i-n structure: . An open-circuit voltage of has been observed under an intensity of illumination of using a tungsten-halogen lamp. The short-circuit current was . Structural, optical, and electrical properties of and are presented. X-ray photoelectron spectroscopy depth profile on the film indicated uniformity in composition with respect to Cu, Sb, and S atoms through the film thickness. X-ray diffraction studies using standard mode and grazing incidence at fixed angles showed the layer structure of the photovoltaic p-i-n device.