Dynamic hysteresis scaling of ferroelectric Pb_0.9Ba_0.1(Zr_0.52Ti_0.48)O₃thin films

Abstract

We measure systematically the intrinsic scaling behavior of dynamic hysteresis for Pb(0.9)Ba(0.1)(Zr(0.52)Ti(0.48))O(3) (PBZT) ferroelectric thin films with Pt electrodes on Si substrates, utilizing the Sawyer-Tower technique. For the as-prepared thin films of similar thickness and microstructure, over the low frequency range, the scaling follows the power law [Formula: see text] under low E(0) and the power law [Formula: see text] under high E(0), where ⟨A⟩ is the hysteresis area, and f and E(0) are the frequency and amplitude of the external electric field. In the high- f range, the power law for low E(0) takes the form of [Formula: see text], while that for high E(0) takes the form of [Formula: see text]. It is identified that the dynamic behaviors at low frequency mainly come from the intrinsic domain reversal instead of others like the leakage current, while the depolarization field may influence the frequency exponents at high frequency. We study the temperature scaling of the hysteresis, indicating that the scaling under low E(0) is roughly consistent with the (Φ(2))(2) model. Finally, we argue that experimentally obtained power law scaling for Pb(Zr(0.52)Ti(0.48))O(3) thin films prepared under the given conditions may not be reliable due to the polarization fatigue effect.