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Annealing effects on Czochralski grown Lu2Si2O7:Ce3+ crystals under different atmospheres
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Citations
12
References
2008
Year
Optical MaterialsEngineeringLuminescence EfficiencyCrystal Growth TechnologyLuminescent GlassChemistryLuminescence PropertyLuminescence SpectraChemical EngineeringCe3+ CrystalsMaterials ScienceMaterials EngineeringInorganic ChemistryPhotoluminescencePhotochemistryCrystal MaterialOptoelectronic MaterialsCrystallographyCrystal Structure DesignTransition Metal ChalcogenidesLuminescence MechanicsCondensed Matter PhysicsApplied PhysicsFunctional MaterialsCermet
Cerium-doped lutetium pyrosilicate Lu2Si2O7:Ce3+ (LPS:Ce) single crystal samples grown via Czochralski method were annealed under air and H2 atmospheres from 350to1600°C. The x-ray excited luminescence spectra and UV as well as thermal stimulated luminescence spectra were measured. It was found that the luminescence efficiency after annealing in air at 1400°C was significantly enhanced compared to the unannealed samples. This phenomenon was suggested to be caused by the existence of some oxygen vacancies in the LPS:Ce crystals, and these oxygen vacancies can be effectively eliminated by means of annealing in air. Although the annealing will lead to the oxidization of cerium ions from Ce3+ ions to Ce4+, which is harmful to the luminescent efficiency, the annealing treatment does enhance the luminescent efficiency of LPS:Ce, without changing its luminescence mechanics.
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