The de Haas–van Alphen effect and the Fermi surface in CePt₃Si and LaPt₃Si

Abstract

We have carried out a de Hass?van Alphen (dHvA) experiment for the recently discovered CePt3Si, which is the first heavy fermion superconductor without inversion symmetry in the tetragonal crystal structure, together with a dHvA experiment for a non-4f reference compound LaPt3Si. As for LaPt3Si, several dHvA branches were observed. Among them, the two main dHvA branches with the dHvA frequency (the cyclotron effective mass) of 1.10 ? 108?Oe?(1.4?m0) and 8.41 ? 107?Oe?(1.5?m0) were found to be well explained from the FLAPW energy band calculations, corresponding to bands 64-?and 63-multiply-connected hole Fermi surfaces, respectively. On the other hand, the dHvA frequencies of 107?Oe in CePt3Si are small in magnitude, although the corresponding cyclotron masses of 10?20?m0 are extremely large.