Journal of The Electrochemical Society · 1962 · 76 citations · 0 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsInorganic ChemistryMaterials PhysicsDefect CharacterizationDefectsElectrical ConductivityMetal OxidesOxide SemiconductorsSemiconductor DefectsConductivityCrystal Defects In OxidesDefect StatesElectrical Conductivity MeasurementsElectronic DefectsIonic DefectsOxygen VacanciesOxygen Vacancies In Metal Oxides
The defect structure of has been studied by measurements of the electrical conductivity and the weight change of as a function of the partial pressure of oxygen. exhibits p‐type conductivity at pressures close to 1 atm oxygen and n‐type conductivity at lower oxygen pressures. The defect structure is interpreted in terms of interstitial oxygen ions (p‐type) and oxygen vacancies (n‐type). has been found to have a small homogeneity range. The heat of formation of oxygen vacancies is .