Metalorganic Chemical Vapor Deposition of BaTiO₃ Films on MgO(100)

Abstract

BaTiO 3 thin films were prepared on MgO(100) substrates by chemical vapor deposition using barium β-diketonate {Ba(C 11 H 19 O 2 ) 2 } and titanium tetraisopropoxide {Ti[OCH(CH 3 ) 2 ] 4 } as metalorganic precursors. BaTiO 3 films deposited at 800-1000°C showed prominent a -axis orientation perpendicular to the substrate surface. The deposition rate of these films was 1.0-1.2 µm/h. The rocking curve of BaTiO 3 (200) reflection from the film deposited at 800°C indicated strong crystallographic orientation. The epitaxial relationship between the film and the substrate was found by X-ray pole figure analysis. The relative dielectric constant of a polycrystalline BaTiO 3 film prepared on a Pt(100)/MgO(100) substrate at 800°C was 1040 (10 kHz, 20 V/cm).