Magnetoresistance Effect in <i>p</i>-Zn₃As₂ Single Crystals

Abstract

Magnetoresistance effect in p -Zn 3 As 2 Single crystals with carrier concentration of ∼7×10 15 ∼10 18 /cm 3 was measured at low temperatures. The undoped crystals usually had ∼10 17 /cm 3 carriers and showed negative magnetoresistance which could be explained by the model of metallic impurity conduction. Specimens containing less carriers (∼7×10 15 /cm 3 ) showed positive magnetoresistance which was characterized by the intermediate impurity conduction. Specimens with p ∼3×10 16 /cm 3 showed magnetoresistance which could be explained by the additive contribution of the negative and positive effect. A possible model is proposed to explain these effects consistently.