Characteristics of BaTiO₃ Films Prepared by Pulsed Laser Deposition

Abstract

BaTiO 3 thin films possessing ferroelectric characteristics have been successfully synthesized using the laser ablation technique. The films are polycrystalline when deposited with substrate temperature higher than 550°C at 1 mbar oxygen pressure. All of the films are highly textured and dominated by (111) grains. The zero-voltage dielectric constant and ferroelectricity derived from C-V measurement increase with substrate temperature. The best properties obtained are ε r =485, P r =0.32 µC/cm 2 , P s =2.65 µC/cm 2 and E c =7.38 kV/cm. The charge storage density is highest and the leakage current density is lowest for 750°C-deposited films. They are Q c =1.14 µC/cm 2 and J 1 =0.55 µA/cm 2 , respectively. The results indicate that the BaTiO 3 films are promising for application as high-density memory dielectrics.