A 200×200 CCD image sensor fabricated on high-resistivity silicon

Abstract

A charge coupled device (CCD) image sensor fabricated on high-resistivity silicon is described. The resistivity, about 10,000 /spl Omega/-cm, allows for operation of the CCD with the entire 300 /spl mu/m substrate depleted. This results in better red to near infrared response when compared to conventional and thinned CCDs. In addition the CCD has good blue response when back illuminated. Since the substrate is fully depleted, thinning, with its inherent difficulties, is not necessary in order to enhance blue response.