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Study on Anomalous Hall Resistivity of Nd<sub>2</sub>Mo<sub>2-<i>x</i></sub>Ti<sub><i>x</i></sub>O<sub>7</sub>
20
Citations
9
References
2001
Year
Magnetic PropertiesEngineeringLow-dimensional MagnetismMagnetic ResonanceMagnetic TexturesHall ResistivitySpintronic MaterialMagnetic MaterialsMagnetoresistanceMagnetismQuantum MaterialsMagnetic Topological InsulatorMaterials ScienceSpin-charge-orbit ConversionPhysicsCrystalline DefectsAnomalous Hall ResistivityO 7ρ HSolid-state PhysicQuantum MagnetismSpintronicsNatural SciencesApplied PhysicsCondensed Matter PhysicsDisordered Quantum System
Hall resistivity ρ H has been studied for single crystals of Nd 2 Mo 2 O 7 , which has the ferromagnetic and chiral ordered state. Effects of Ti-doping on ρ H have also been studied down to 3 K under the magnetic field ( H ) up to 7 T. The T - and H -regions of the measurements have been extended for non-doped samples to 50 mK and 15 T, respectively. From the results, it has been confirmed that two components of the anomalous Hall resistivity exist. One is proportional to the net magnetization of Mo atoms, M Mo . It changes its sign with the doping. The other is proportional to the net magnetization of Nd atoms, M Nd and does not exhibit the sign change. The Hall resistivity has a finite and almost T -independent value at very low temperatures. These results on the behavior of ρ H are discussed by considering the existing theories including the one recently proposed by a mechanism related to the spin chiral order.
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