An SiGe/Si Heterojunction Phototransistor for Opto-MicrowaveApplications:Modeling and first Experimental Results

Abstract

A first SiGe bipolar heterojunction phototransistor developed in a commercial available SiGe/Si technology is presented.Emphasis on the development of a complete numerical model for the simulation of strained- SiGe based devices is given.The SiGe HPT exhibits a dc opto-microwave power gain of 3.46dB,i.e.a responsivity with 50Ohms loads of 1.49A/W,and a –3dB bandwidth of 0.4GHz at 940nm.Power budgets are drawn with the use of the opto-microwave power gain ’s monogram chart.