Evaluations of the low-field mobility in degenerate GaN/AlN heterojunctions

Abstract

We solve the linearized Boltzmann equation for a degenerate quasi-two-dimensional electron system confined to a triangular quantum well at a III nitride heterojunction and interacting only with the polar optical phonons. The method of solution makes use of a ladder technique, and employs the Fang-Howard approximation for the description of the confined electrons. The variations of the effective-momentum relaxation time with the electron energy, and of the mobility with electron density are presented for a GaN/AlN heterojunction.