Growth Style of Bi₄Ti₃O₁₂ Thin Films on CeO₂/Ce_0.12Zr_0.88O₂ Buffered Si Substrates

Abstract

Epitaxial Bi 4 Ti 3 O 12 thin films are grown on CeO 2 /Ce 0.12 Zr 0.88 O 2 buffered Si(100) substrates. The buffer consists of 40 Å Ce 0.12 Zr 0.88 O 2 and 80 Å CeO 2 layers which are grown on Si(100) substrates by an e -beam evaporation method. Bi 4 Ti 3 O 12 films are grown by the molecular beam epitaxy method using the Bi self-limiting function. Epitaxial growth of these layers on Si is confirmed by X-ray diffraction analyses. Growth style of Bi 4 Ti 3 O 12 films is examined in detail by observations of reflection high-energy electron diffraction and atomic force microscopy, and the growth mechanism is discussed.