EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsMixed-signal Integrated Circuit DesignTransistor BiasingBuffer AmplifiersBuffer DesignCmos Analog Integrated CircuitsOutput ImpedanceParasitic CapacitanceTransconductanceTransconductance Amplifier StagesWideband Amplifiers
The paper presents a buffer stage used in a fast response LDO processed in a double-metal 0.8 /spl mu/m CMOS process. The stage consists of a transconductance amplifier (OTA) in a unity-gain configuration. The buffer has a wideband architecture and is designed to drive the parasitic gate-to-source capacitance of the power transistor. Output impedance is lower than 2k/spl Omega/ and current consumption is less than 20/spl mu/A.
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