High density RF MIM capacitors using high-κ AlTaO/sub x/ dielectrics

Abstract

Very high capacitance density of 10 fF//spl mu/m/sup 2/ is measured using high-/spl kappa/ AlTaO/sub x/, with small capacitance reduction of 5% from 10 KHz to 30 GHz, low loss tangent < 0.03, and process compatible with existing VLSI back-end integration. Small voltage dependence of capacitance < 600 ppm, mathematical derived from S-parameters, is obtained at 1 GHz, which ensures this MIM capacitor useful for high precision circuits operated at RF regime.