Performance of the new generation emitter turn-off (ETO) thyristor

Abstract

The emitter turn-off thyristor (ETO) is a GTO-MOSFET hybrid high power device that can achieve unity turnoff gain condition. A new generation of ETO rated at 4500 V and 4000 A has recently been developed. The improvements are made in the area of manufacturability, functionality and performance. 4000 A snubberless turn-off capability and low conduction loss are achieved in the new ETO using novel circuits and housing design. This paper presents the design, characteristics, and the performance of the new ETO.