A 0.5 V 200 MHz 1-stage 32 b ALU using a body bias controlled SOI pass-gate logic

Abstract

SOI CMOS with gate-body connection (DTMOS) and body bias controlled SOI pass-gate logic (BCSOI pass-gate) take advantage of individually isolated SOI device active area and reduce threshold voltage by controlling each device body bias. Hence, they enjoy higher speed than circuits based on fixed low threshold voltage. The direct body bias control used in previous work suffers from leakage current at supply voltage higher than 0.8V due to drain-body junction leakage. A practical circuit technology that offers the highest speed, lowest operation voltage and stable operation under wide supply voltage demonstrates performance with an ALU macro using this technology.