15-Watt Internally Matched GaAs FETs and 20-Watt Amplifier Operating at 6 GHz

Abstract

6-GHz 15-Watt and 8-GHz 10-Watt internally matched GaAs FETs have been developed. The lumped-element two section input matching network is formed on ceramic plates with a high dielectric constant. The distributed single section output circuit is formed in microstrip pattern on an alumina plate. A 6-GHz 20-Watt balanced amplifier module has been realized using the internally matched devices which operate without any external matching.