Applied Physics Letters · 2009 · 16 citations · 14 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsInterface ScienceMagnetic MaterialsFerromagnetic MaterialsFerromagnetismMagnetic OxidesMagnetic Properties Of SolidsSpintronic MaterialsSpintronicsMagnetic Materials CharacterizationMagnetic Tunnel JunctionsMagnetic Tunneling JunctionsMagnetoresistanceTunnel MagnetoresistanceTunneling Magnetoresistance
We found that the tunnel magnetoresistance ratio of fully epitaxial Co2MnGe/MgO/Co50Fe50 magnetic tunnel junctions (MTJs) increased discontinuously and significantly from 92% at room temperature (RT) (244% at 4.2 K) for Ta of 475 °C to 160% at RT (376% at 4.2 K) for Ta of 500 °C, where Ta is the temperature at which the MTJ trilayer was in situ annealed right after deposition of the upper electrode. We also found that the dI/dV versus V characteristics for the parallel and antiparallel magnetization configurations changed discontinuously and markedly with increasing Ta from 475 °C or less to 500 °C or higher. These significant changes are discussed in terms of a possible change in the spin-dependent interfacial density of states.
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Takayuki Ishikawa, Takao Marukame, Hiromichi Kijima et al. · Applied Physics Letters · 2006 · 194 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17