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Dielectric properties of Li3VO4 single crystals grown by the Czochralski method
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Citations
7
References
2003
Year
Materials EngineeringMaterials ScienceDielectric PropertiesSolid-state IonicEngineeringCrystal MaterialCrystal Growth TechnologyApplied PhysicsCondensed Matter PhysicsCzochralski MethodSolid-state ChemistryFunctional MaterialsCrystallographyLi3vo4 Single CrystalsEquivalent Circuit
We studied dielectric properties of Li3VO4 single crystals grown by the Czochralski method along the a axis at temperatures ranging from room temperature to 800 °C and frequencies ranging from 100 Hz to 15 MHz. We analyzed the impedance data by introducing an equivalent circuit which consists of two parallel combinations of capacitors and resistors in series. The conductivity and the relaxation time of Li3VO4 are found to show the Arrhenius behavior with two different activation energies which crossed over at temperatures around 400 °C. The observed crossover seems to originate from a dissociation of the Li–O bond at high temperatures.
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