Publication | Closed Access
Epitaxial growth of (001)-oriented and (110)-oriented SrBi2Ta2O9 thin films
71
Citations
10
References
1998
Year
Materials EngineeringMaterials ScienceOxide HeterostructuresFour-circle X-ray DiffractionEngineeringDesired OrientationsEpitaxial GrowthSurface ScienceApplied PhysicsLaser ApplicationsThin Film Process TechnologyThin FilmsPulsed Laser DepositionMolecular Beam EpitaxyThin Film Processing
Epitaxial SrBi2Ta2O9 thin films have been grown with (001) and (110) orientations by pulsed laser deposition on (001) LaAlO3–Sr2AlTaO6 and (100) LaSrAlO4 substrates, respectively. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase pure epitaxial films. Minimization of surface mesh mismatch between the film and substrate (i.e., choice of appropriate substrate material and orientation) was used to stabilize the desired orientations and achieve epitaxial growth.
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