Self-assembling in AlxGa1−xNyAs1−y alloys

Abstract

The self-assembling of the isoelectronic cation impurities in lightly anion-doped AlxGa1−xNyAs1−y alloys with the zinc blende structure is predicted. The tetrahedral surroundings of Ga (Al) impurity atoms should be formed around As (N) impurity atoms in AlN-enriched (GaAs-enriched) alloys. The cation impurity concentrations for the complete Ga (Al) surroundings of all As (N) atoms are estimated at the higher growth and lower annealing temperatures. The advantage of the Al–N and Ga–As bonding over the Al–As and Ga–N bonding is an origin of the self-assembling in lightly isoelectronically-doped AlxGa1−xNyAs1−y alloys.